Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• 6 to 10 nm for both the as-deposited and annealed films (Figure 6a). It may arise from Fermi level de-pinning at the NS-WOx/p-Si heterojunction when the film thickness increases to 10 nm. To understand this behaviour, in the I–V-measurement configuration (Figure 6a, inset), the WOx film can be

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• is the occurrence of the forming process, which occurs when the structure under test is first stimulated by an electric current (or voltage) in a cyclic I–V measurement. Conclusion The paper presents the results of investigations of the memory effect observed in a thin-film structure with a U-shape

High-stress study of bioinspired multifunctional PEDOT:PSS/nanoclay nanocomposites using AFM, SEM and numerical simulation

• Alfredo J. Diaz,
• Hanaul Noh,
• Tobias Meier and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 2069–2082, doi:10.3762/bjnano.8.207

• within the linear regime. Due to the difficulty and unreliability of holding the AFM probe steady during measurement (due to high drift in ambient conditions), which would be required in order to maintain a constant contact area during a current-voltage (I–V) measurement, we confirm linearity of the I–V

Bi-layer sandwich film for antibacterial catheters

• Gerhard Franz,
• Florian Schamberger,
• Hamideh Heidari Zare,
• Sara Felicitas Bröskamp and
• Dieter Jocham

Beilstein J. Nanotechnol. 2017, 8, 1982–2001, doi:10.3762/bjnano.8.199

Three-in-one approach towards efficient organic dye-sensitized solar cells: aggregation suppression, panchromatic absorption and resonance energy transfer

• Jayita Patwari,
• Samim Sardar,
• Bo Liu,
• Peter Lemmens and
• Samir Kumar Pal

Beilstein J. Nanotechnol. 2017, 8, 1705–1713, doi:10.3762/bjnano.8.171

• acceptor SQ2. DSSCs have been fabricated by co-sensitizing the photoanodes with mixtures of the two dyes to achieve a reasonably good combined absorption solar light by these two dyes. The I–V measurement data exhibit a higher efficiency for the co-sensitized DSSCs than for the single-dye-sensitized DSSCs

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

• Saif Saadaoui,
• Mohamed Aziz Ben Youssef,
• Moufida Ben Karoui,
• Rached Gharbi,
• Emanuele Smecca,
• Vincenzina Strano,
• Salvo Mirabella,
• Alessandra Alberti and
• Rosaria A. Puglisi

Beilstein J. Nanotechnol. 2017, 8, 287–295, doi:10.3762/bjnano.8.31

• ZnO NWs was also applied by the deposition of a thin TiO2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current Jsc by seven times from 2.45 × 10−3 mA/cm2 to 1.70 × 10−2 mA /cm2. Keywords: DSSCs; I–V measurement

• using a Keithley 4200 device under AM1.5 conditions. Figure 11a shows the I–V measurement response of the DSSC cells assembled with a ZnO NW layer on photoanodes annealed at different temperatures with two different structures formed by using only ZnO NWs in the photoanode and with applying a TiO2

High electronic couplings of single mesitylene molecular junctions

• Yuki Komoto,
• Shintaro Fujii,
• Tomoaki Nishino and
• Manabu Kiguchi

Beilstein J. Nanotechnol. 2015, 6, 2431–2437, doi:10.3762/bjnano.6.251

• conductance measurement and I–V measurement, two conductance states (a high-conductance and a low-conductance state) were identified. The energy level alignment and the electronic couplings of mesitylene to Au electrodes were determined by fitting of statistically averaged I–V curves. The origin of the high

Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

• Gian Carlo Gazzadi and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2015, 6, 1298–1305, doi:10.3762/bjnano.6.134

• same uniform bright contrast. A second I–V measurement was taken on the same bias range, completing the cycle, and data are shown in Figure 2a (circles). The I–V trend is strictly linear, and current values are increased dramatically from the previous run, reaching almost I = 200 μA at V = 0.1 V. The

• nm wide. A square deposition on SNW end was applied as for SNW 2. EDX analysis, not shown, gave concentrations of 6 atom % C, 13 atom % O and 81 atom % Co. The first I–V measurement, shown in the inset of Figure 6b, was taken with a bias of V = 0.4 V and displays a linear behavior, slightly deviating

• nanoparticles [34]. A second consideration regards the distribution of cobalt along the wires and its connection to I–V measurement history and electromigration. In SNW 1, the Joule heating during the current burst is making the wire fully metallic and polycrystalline. The current density associated to the

Nano-contact microscopy of supracrystals

• Adam Sweetman,
• Nicolas Goubet,
• Ioannis Lekkas,
• Marie Paule Pileni and
• Philip Moriarty

Beilstein J. Nanotechnol. 2015, 6, 1229–1236, doi:10.3762/bjnano.6.126

• voltage applied (4 V) on the setpoint “stabilisation” current (Is) used to acquire each of the spectra observed in Figure 3C. The stabilisation current is the setpoint value at which the feedback loop operates before the loop is disabled to allow the I(V) measurement to take place. Is therefore provides a

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• . After the EB process, the device is characterized by an I–V measurement keeping the bias voltage below ±1.5 V to avoid any modification of the gap [10][28]. An example of a device displaying a sizeable tunneling current in this range is given in Figure 1b. Figure 1c and Figure 1d show the corresponding

• ) process. Inset: optical image of one of the few-layer graphene flakes used (the distance between the crosses at the corners is 45 µm); b) example of an I–V measurement for a device showing a sizeable tunneling current after the EB process. The black circle are the experimental data and the red line is the

• . Scale bar is 1 µm. c) I–V curve recorded for a typical electroburning (EB) process in air. d) Example of an I–V measurement after the EB process in air (no current is measured in the I–V when the EB process is performed under vacuum). a) SEM image of a non-patterned disc after the EB process. During EB

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• temperature is determined by means of an accurate I–V measurement, through a suitable model which uses the thermal conductivity as a parameter to be fitted with experimental data. The main disadvantage of top-down nanowire networks is that they are defined in a very thin layer which must be supported by a

Surface functionalization of aluminosilicate nanotubes with organic molecules

• Wei Ma,
• Weng On Yah,
• Hideyuki Otsuka and
• Atsushi Takahara

Beilstein J. Nanotechnol. 2012, 3, 82–100, doi:10.3762/bjnano.3.10

• terthiophene/imogolite hybrids were investigated by I–V measurement. By coating the pure imogolite or terthiophene/imogolite onto a silicon wafer and connecting by silver paste at two ends, the conductivity was measured by means of a source meter. The I–V plots, of current on the order of milliamperes versus

An MCBJ case study: The influence of π-conjugation on the single-molecule conductance at a solid/liquid interface

• Wenjing Hong,
• Hennie Valkenier,
• Gábor Mészáros,
• David Zsolt Manrique,
• Artem Mishchenko,
• Alexander Putz,
• Pavel Moreno García,
• Colin J. Lambert,
• Jan C. Hummelen and
• Thomas Wandlowski

Beilstein J. Nanotechnol. 2011, 2, 699–713, doi:10.3762/bjnano.2.76

• same analysis method to the blue traces did not lead to any clear feature between 10−1 G0 and 10−8 G0, which supports the assignment of the two types of traces. Continuous current–voltage (I–V) measurement I–V curves in the stretching process The high mechanical stability of the MCBJ setup provides a

• as compared to the dihydroanthracene AH wire is attributed to a destructive quantum interference in the AQ-type junction [24][56]. Complementary data from single-molecule I–V traces were only accessible for AC (section "Continuous current–voltage (I–V) measurement"), and not for AQ and AH. The rather